1N6263 vs 1N5711 Comparación
Comparación detallada lado a lado de 1N6263 por STMicroelectronics y 1N5711 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1N6263 | 1N5711 |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,12 | $0,18 |
| Diode Type | Small Signal Schottky (metal-to-silicon junction) | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | — |
| Average Forward Current (IF) | 15 mA | — |
| Power Dissipation | 400 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Reverse Recovery Time | Ultrafast (no stored charge, barrier-limited) | — |
| Surge Current Rating (IFSM) | [DATA_NEEDED: surge current] | — |
| Technology | Guard-ring Schottky barrier | — |
| Application Focus | UHF/VHF detection, pulse applications, broad dynamic range | — |
| Encapsulado | DO-35 (axial, through-hole glass) | DO-35 (DO-204AH) hermetic axial-lead glass |
| Tipo de montaje | Through Hole | Through-Hole |
| Number of Elements | 1 | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |