1N6263 vs 1N5711 对比

详细并排对比 1N6263 出自 STMicroelectronics 和 1N5711 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
1N6263 1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics

1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics

1N6263 ✓ 量产中
STMicroelectronics
1N5711 1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 ✓ 量产中

规格对比

参数 1N6263 1N5711
品牌 STMicroelectronics STMicroelectronics
分类 Diodes Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.18
Diode Type Small Signal Schottky (metal-to-silicon junction) Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) —
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
封装 DO-35 (axial, through-hole glass) DO-35 (DO-204AH) hermetic axial-lead glass
安装类型 Through Hole Through-Hole
Number of Elements 1 —
工作温度范围 [DATA_NEEDED: operating temperature range] —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
工作温度 — [DATA_NEEDED: operating temperature range]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

数据手册与资源

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