1N6263 vs 1N5711 Сравнение

Подробное сравнение бок о бок 1N6263 от STMicroelectronics и 1N5711 от STMicroelectronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

STMicroelectronics
1N6263 1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics

1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics

1N6263 ✓ Активен
STMicroelectronics
1N5711 1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 ✓ Активен

Сравнение характеристик

Параметр 1N6263 1N5711
Бренд STMicroelectronics STMicroelectronics
Категория Diodes Diodes
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,12 $0,18
Diode Type Small Signal Schottky (metal-to-silicon junction) Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) —
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
Корпус DO-35 (axial, through-hole glass) DO-35 (DO-204AH) hermetic axial-lead glass
Тип монтажа Through Hole Through-Hole
Number of Elements 1 —
Диапазон рабочих температур [DATA_NEEDED: operating temperature range] —
Статус RoHS [DATA_NEEDED: RoHS status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Рабочая температура — [DATA_NEEDED: operating temperature range]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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