1N6263 vs 1N5711 비교

다음의 상세 나란히 비교: 1N6263 제조: STMicroelectronics 및 1N5711 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1N6263 1N5711
브랜드 STMicroelectronics STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.12 $0.18
Diode Type Small Signal Schottky (metal-to-silicon junction) Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) —
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
패키지 DO-35 (axial, through-hole glass) DO-35 (DO-204AH) hermetic axial-lead glass
실장 유형 Through Hole Through-Hole
Number of Elements 1 —
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
RoHS 상태 [DATA_NEEDED: RoHS status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
동작 온도 — [DATA_NEEDED: operating temperature range]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청