1N6263 vs 1N5711 Comparaison
Comparaison détaillée côte à côte de 1N6263 par STMicroelectronics et 1N5711 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 1N6263 | 1N5711 |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,12 | $0,18 |
| Diode Type | Small Signal Schottky (metal-to-silicon junction) | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | — |
| Average Forward Current (IF) | 15 mA | — |
| Power Dissipation | 400 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Reverse Recovery Time | Ultrafast (no stored charge, barrier-limited) | — |
| Surge Current Rating (IFSM) | [DATA_NEEDED: surge current] | — |
| Technology | Guard-ring Schottky barrier | — |
| Application Focus | UHF/VHF detection, pulse applications, broad dynamic range | — |
| Boîtier | DO-35 (axial, through-hole glass) | DO-35 (DO-204AH) hermetic axial-lead glass |
| Type de montage | Through Hole | Through-Hole |
| Number of Elements | 1 | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |