2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 Vergleich
Detaillierter Direktvergleich von 2EDL8034G4CXTMA1 von Infineon und 1EDN7146UXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2EDL8034G4CXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,82 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | Single-channel high-side TDI gate driver |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Anzahl der Ausgänge | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Betriebs-Sperrschichttemperatur | -40 C to +125 C | — |
| Gehäuse | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Anstiegszeit | — | [DATA_NEEDED: typical rise time ns] |
| Abfallzeit | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Betriebstemperaturbereich | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| RoHS-Status | — | Compliant |
| Topology Support | — | Half-bridge, low-side, high-side |