2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 Comparison
Detailed side-by-side comparison of 2EDL8034G4CXTMA1 by Infineon and 1EDN7146UXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2EDL8034G4CXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.82 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | Single-channel high-side TDI gate driver |
| Configuration | Non-Inverting | β |
| Bootstrap Voltage (Max) | 120 V | β |
| Peak Source Current | 3 A | β |
| Peak Sink Current | 4 A | β |
| Number of Outputs | 2 | β |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | β |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | β |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | β |
| Input Logic Compatibility | 3.3 V / 5 V | β |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | β |
| UVLO Protection | Yes (VCC and VBS) | β |
| Isolation Type | Junction-isolated (level-shifted) | β |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | β |
| Operating Junction Temperature | -40 C to +125 C | β |
| Package | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | β |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Maximum Blocking Voltage | β | 200 V |
| Input Configuration | β | Truly differential (TDI) |
| Output Current (Source / Sink) | β | 1.5 A / 2.5 A |
| Propagation Delay | β | [DATA_NEEDED: typical propagation delay ns] |
| Rise Time | β | [DATA_NEEDED: typical rise time ns] |
| Fall Time | β | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | β | [DATA_NEEDED: VCC range V] |
| Operating Temperature Range | β | -40C to +125C |
| Target Transistor | β | GaN SG HEMT or power MOSFET |
| RoHS Status | β | Compliant |
| Topology Support | β | Half-bridge, low-side, high-side |