2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 Comparaison
Comparaison détaillée côte à côte de 2EDL8034G4CXTMA1 par Infineon et 1EDN7146UXTSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 2EDL8034G4CXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,55 | $0,82 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | Single-channel high-side TDI gate driver |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Nombre de sorties | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Température de jonction en fonctionnement | -40 C to +125 C | — |
| Boîtier | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Type de montage | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Temps de montée | — | [DATA_NEEDED: typical rise time ns] |
| Temps de descente | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Plage de température de fonctionnement | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Statut RoHS | — | Compliant |
| Topology Support | — | Half-bridge, low-side, high-side |