2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 对比

详细并排对比 2EDL8034G4CXTMA1 出自 Infineon 和 1EDN7146UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 量产中
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 量产中

规格对比

参数 2EDL8034G4CXTMA1 1EDN7146UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.82
Driver Type Half-Bridge (High-Side / Low-Side) Single-channel high-side TDI gate driver
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
输出数量 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
工作结温 -40 C to +125 C —
封装 PG-VDSON-10-2 (DSN-10) with exposed pad PG-VSON-1 (6-pin with exposed pad)
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升时间 — [DATA_NEEDED: typical rise time ns]
下降时间 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
工作温度范围 — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
RoHS 状态 — Compliant
Topology Support — Half-bridge, low-side, high-side

数据手册与资源

浏览全部产品 创建 BOM 获取报价