2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 Comparación
Comparación detallada lado a lado de 2EDL8034G4CXTMA1 por Infineon y 1EDN7146UXTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2EDL8034G4CXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $0,82 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | Single-channel high-side TDI gate driver |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Número de salidas | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Temperatura de unión de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Tiempo de subida | — | [DATA_NEEDED: typical rise time ns] |
| Tiempo de bajada | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Estado RoHS | — | Compliant |
| Topology Support | — | Half-bridge, low-side, high-side |