2EDL8034G4CXTMA1 vs 2EDL8033G4BXTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL8034G4CXTMA1 von Infineon und 2EDL8033G4BXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL8034G4CXTMA1 2EDL8033G4BXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $1,49
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Anzahl der Ausgänge 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V TTL
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) Junction-isolated (non-galvanic)
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Betriebs-Sperrschichttemperatur -40 C to +125 C —
Gehäuse PG-VDSON-10-2 (DSN-10) with exposed pad PG-VDSON-8-5
Montageart Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL-Level [DATA_NEEDED: MSL level] —
Topologie — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
RoHS-Status — Compliant
Marking Code — 2ED8033G4B

Datenblätter & Ressourcen

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