2EDL8034G4CXTMA1 vs 2EDL8033G4BXTMA1 对比

详细并排对比 2EDL8034G4CXTMA1 出自 Infineon 和 2EDL8033G4BXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 量产中
Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 量产中

规格对比

参数 2EDL8034G4CXTMA1 2EDL8033G4BXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $1.49
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
输出数量 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V TTL
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) Junction-isolated (non-galvanic)
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
工作结温 -40 C to +125 C —
封装 PG-VDSON-10-2 (DSN-10) with exposed pad PG-VDSON-8-5
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL 等级 [DATA_NEEDED: MSL level] —
拓扑 — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
RoHS 状态 — Compliant
Marking Code — 2ED8033G4B

数据手册与资源

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