2EDL8034G4CXTMA1 vs 2EDL8033G4BXTMA1 비교
다음의 상세 나란히 비교: 2EDL8034G4CXTMA1 제조: Infineon 및 2EDL8033G4BXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2EDL8034G4CXTMA1 | 2EDL8033G4BXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.55 | $1.49 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| 출력 수 | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | TTL |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | Junction-isolated (non-galvanic) |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| 동작 접합 온도 | -40 C to +125 C | — |
| 패키지 | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VDSON-8-5 |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | — |
| 토폴로지 | — | Half-bridge (high-side + low-side) |
| Maximum Bootstrap Voltage (VBS) | — | 120 V |
| Source Drive Current | — | 3 A |
| Sink Drive Current | — | 4 A |
| Number of Channels | — | 2 (HS + LS) |
| Input Common-Mode Range | — | -10 V to 20 V |
| Input Type | — | Independent HS and LS |
| Integrated Dead-Time Control | — | Yes (programmable) |
| Under-Voltage Lockout (VCC/VDD) | — | Yes |
| Under-Voltage Lockout (VBS/High-Side) | — | Yes |
| Shoot-Through Protection | — | Yes |
| RoHS 상태 | — | Compliant |
| Marking Code | — | 2ED8033G4B |