2N7002LT1G vs BSS138L Vergleich
Detaillierter Direktvergleich von 2N7002LT1G von onsemi und BSS138L von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002LT1G | BSS138L |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,02 |
| Polarity | N-Channel | N-Channel |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Gehäuse | SOT-23-3 (TO-236) | SOT-23-3 |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Kategorie | Small Signal MOSFET | — |
| Technology | MOSFET | Trench MOSFET, high cell density |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Packaging | [DATA_NEEDED: packaging type] | 3000 units per reel (tape and reel) |
| Operating Mode | — | Enhancement Mode |
| VDS Drain-Source Voltage | — | 50 V |
| Continuous Drain Current (Ta) | — | 200 mA |
| Power Dissipation (Ta) | — | 350 mW |
| RDS(on) Max | — | 3.5 ohm |
| Gate Type | — | Logic Level |
| Switching Performance | — | Fast switching, rugged, reliable |
| Eingangskapazität | — | [DATA_NEEDED: Ciss] |
| VGS Gate-Source Voltage | — | [DATA_NEEDED: VGS max rating] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |