2N7002LT1G vs BSS138L Comparación
Comparación detallada lado a lado de 2N7002LT1G por onsemi y BSS138L por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2N7002LT1G | BSS138L |
|---|---|---|
| Marca | onsemi | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,02 | $0,02 |
| Polarity | N-Channel | N-Channel |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Encapsulado | SOT-23-3 (TO-236) | SOT-23-3 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 | — |
| Categoría | Small Signal MOSFET | — |
| Technology | MOSFET | Trench MOSFET, high cell density |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Packaging | [DATA_NEEDED: packaging type] | 3000 units per reel (tape and reel) |
| Operating Mode | — | Enhancement Mode |
| VDS Drain-Source Voltage | — | 50 V |
| Continuous Drain Current (Ta) | — | 200 mA |
| Power Dissipation (Ta) | — | 350 mW |
| RDS(on) Max | — | 3.5 ohm |
| Gate Type | — | Logic Level |
| Switching Performance | — | Fast switching, rugged, reliable |
| Capacitancia de entrada | — | [DATA_NEEDED: Ciss] |
| VGS Gate-Source Voltage | — | [DATA_NEEDED: VGS max rating] |
| Estado RoHS | — | [DATA_NEEDED: RoHS status] |