BSL316CH6327XTSA1 vs BSS816NWH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL316CH6327XTSA1 von Infineon und BSS816NWH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSL316CH6327XTSA1 | BSS816NWH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,22 | $0,14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET | BSS816NW (OptiMOS 2 Small-Signal) |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) | — |
| Drain-Source Voltage (VDS) | 30 V | 20 V |
| Continuous Drain Current (N-channel ID) | 1.4 A | — |
| Continuous Drain Current (P-channel ID) | 1.5 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gehäuse | PG-TSOP6-6 (TSOP6, 6-pin) | SOT-323 (PG-SOT323), 3-pin |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Technology | OptiMOS low-voltage MOSFET | OptiMOS 2 trench MOSFET |
| Channel Type | N-channel + P-channel (dual) | — |
| Pin-Anzahl | 6 | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Transistortyp | — | MOSFET, N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=4.5V | — | 160 mOhm |
| RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| Betriebstemperaturbereich | — | -55C to +150C |
| Qualification | — | AEC-Q101 (Automotive) |
| ESD Protection | — | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |