BSL316CH6327XTSA1 vs BSS816NWH6327XTSA1 对比
详细并排对比 BSL316CH6327XTSA1 出自 Infineon 和 BSS816NWH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSL316CH6327XTSA1 | BSS816NWH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $0.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET | BSS816NW (OptiMOS 2 Small-Signal) |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) | — |
| Drain-Source Voltage (VDS) | 30 V | 20 V |
| Continuous Drain Current (N-channel ID) | 1.4 A | — |
| Continuous Drain Current (P-channel ID) | 1.5 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| 封装 | PG-TSOP6-6 (TSOP6, 6-pin) | SOT-323 (PG-SOT323), 3-pin |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (junction) | — |
| Technology | OptiMOS low-voltage MOSFET | OptiMOS 2 trench MOSFET |
| Channel Type | N-channel + P-channel (dual) | — |
| 引脚数量 | 6 | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| 晶体管类型 | — | MOSFET, N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=4.5V | — | 160 mOhm |
| RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| 工作温度范围 | — | -55C to +150C |
| Qualification | — | AEC-Q101 (Automotive) |
| ESD Protection | — | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |