BSL316CH6327XTSA1 vs BSS816NWH6327XTSA1 비교
다음의 상세 나란히 비교: BSL316CH6327XTSA1 제조: Infineon 및 BSS816NWH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSL316CH6327XTSA1 | BSS816NWH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.22 | $0.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET | BSS816NW (OptiMOS 2 Small-Signal) |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) | — |
| Drain-Source Voltage (VDS) | 30 V | 20 V |
| Continuous Drain Current (N-channel ID) | 1.4 A | — |
| Continuous Drain Current (P-channel ID) | 1.5 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| 패키지 | PG-TSOP6-6 (TSOP6, 6-pin) | SOT-323 (PG-SOT323), 3-pin |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55C to +150C (junction) | — |
| Technology | OptiMOS low-voltage MOSFET | OptiMOS 2 trench MOSFET |
| Channel Type | N-channel + P-channel (dual) | — |
| 핀 수 | 6 | — |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| 트랜지스터 유형 | — | MOSFET, N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=4.5V | — | 160 mOhm |
| RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| 동작 온도 범위 | — | -55C to +150C |
| Qualification | — | AEC-Q101 (Automotive) |
| ESD Protection | — | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |