BSL316CH6327XTSA1 vs BSS816NWH6327XTSA1 比較
詳細な並列比較: BSL316CH6327XTSA1 メーカー: Infineon および BSS816NWH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSL316CH6327XTSA1 | BSS816NWH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.22 | $0.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET | BSS816NW (OptiMOS 2 Small-Signal) |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) | — |
| Drain-Source Voltage (VDS) | 30 V | 20 V |
| Continuous Drain Current (N-channel ID) | 1.4 A | — |
| Continuous Drain Current (P-channel ID) | 1.5 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| パッケージ | PG-TSOP6-6 (TSOP6, 6-pin) | SOT-323 (PG-SOT323), 3-pin |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55C to +150C (junction) | — |
| Technology | OptiMOS low-voltage MOSFET | OptiMOS 2 trench MOSFET |
| Channel Type | N-channel + P-channel (dual) | — |
| ピン数 | 6 | — |
| RoHS ステータス | Compliant | — |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| トランジスタタイプ | — | MOSFET, N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=4.5V | — | 160 mOhm |
| RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| 動作温度範囲 | — | -55C to +150C |
| Qualification | — | AEC-Q101 (Automotive) |
| ESD Protection | — | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |