BSP129H6906XTSA1 vs BSP135H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP129H6906XTSA1 von Infineon und BSP135H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP129H6906XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP129H6906XTSA1 | BSP135H6327XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 240 V | 600 V |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| Drain-Source On-Resistance (RDS(on)) | 6 Ohm (max) | — |
| Operating Mode | Normally-On (Depletion) | Normally ON (depletion) |
| Gate-Source Pinch-Off Voltage | [DATA_NEEDED: VGS(off) typical value] | — |
| Gehäuse | PG-SOT223-4 (SOT-223) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 functional + 1 tab (4 leads) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: TJ max] | -55C to +150C (junction, typical) |
| ESD Protection | Integrated Zener diodes on gate | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life) | 1 |
| Continuous Drain Current (ID) | — | 120 mA |
| Power Dissipation (PD) | — | 1.8 W |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Technology | — | SIPMOS (planar DMOS) |