BSP316PH6327XTSA1 vs BSS169H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP316PH6327XTSA1 von Infineon und BSS169H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP316PH6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,15 |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | Pinch-off approx. -3.5 V (typical) |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Gehäuse | PG-SOT223-4 (TO-261-4) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | [DATA_NEEDED: junction/ambient operating temperature range] |
| Anzahl der Pins | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | Depletion-mode vertical DMOS |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Continuous Drain Current (ID) | — | 170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| Pin-Anzahl | — | 3 |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |