BSP316PH6327XTSA1 vs BSS169H6327XTSA1 Comparison
Detailed side-by-side comparison of BSP316PH6327XTSA1 by Infineon and BSS169H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP316PH6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | Pinch-off approx. -3.5 V (typical) |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Package | PG-SOT223-4 (TO-261-4) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | [DATA_NEEDED: junction/ambient operating temperature range] |
| Number of Pins | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | Depletion-mode vertical DMOS |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Continuous Drain Current (ID) | — | 170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| Pin Count | — | 3 |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |