BSP316PH6327XTSA1 vs BSS169H6327XTSA1 比較
詳細な並列比較: BSP316PH6327XTSA1 メーカー: Infineon および BSS169H6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSP316PH6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.21 | $0.15 |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | Pinch-off approx. -3.5 V (typical) |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| パッケージ | PG-SOT223-4 (TO-261-4) | PG-SOT23 (SOT-23-3) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 C to +150 C (junction) | [DATA_NEEDED: junction/ambient operating temperature range] |
| ピン数 | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | Depletion-mode vertical DMOS |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Continuous Drain Current (ID) | — | 170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| ピン数 | — | 3 |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |