BSP92PH6327XTSA1 vs BSP129H6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSP92PH6327XTSA1 von Infineon und BSP129H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSP92PH6327XTSA1 BSP129H6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,31 $0,30
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Transistortyp P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 240 V
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Gehäuse PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223, 3+Tab)
Montageart Surface Mount Surface Mount
Channel Polarity P-Channel —
Betriebstemperatur -55C to +150C (Tj) -55 C to +150 C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
MSL-Level 1 (unlimited) [DATA_NEEDED: MSL rating]
Pin-Anzahl 4 (Gate, Drain, Drain, Source) —
FET Type — N-Channel, Depletion Mode
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
RoHS-Status — Compliant
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

Datenblätter & Ressourcen

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