BSP92PH6327XTSA1 vs BSP129H6327XTSA1 Comparison

Detailed side-by-side comparison of BSP92PH6327XTSA1 by Infineon and BSP129H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSP92PH6327XTSA1 BSP129H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.30
Manufacturer Infineon Technologies β€”
Product Family OptiMOS P-Channel Small-Signal Power MOSFET β€”
Transistor Type P-Channel Enhancement Mode MOSFET β€”
Drain-Source Voltage (VDS) -250 V 240 V
Continuous Drain Current (ID) -260 mA (Ta) β€”
Power Dissipation (PD) 1.8 W (Ta) β€”
Package PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223, 3+Tab)
Mounting Type Surface Mount Surface Mount
Channel Polarity P-Channel β€”
Operating Temperature -55C to +150C (Tj) -55 C to +150 C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Lead-Free / RoHS Yes / Compliant β€”
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
Pin Count 4 (Gate, Drain, Drain, Source) β€”
FET Type β€” N-Channel, Depletion Mode
Continuous Drain Current (ID) at TA=25C β€” 350 mA
On-Resistance RDS(on) max β€” 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C β€” 1.8 W
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) β€” [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness β€” Yes (rated)
Automotive Qualification β€” AEC-Q101 qualified
RoHS Status β€” Compliant
Lead-Free β€” Yes
Process Technology β€” SIPMOS (vertical DMOS)
Drain Terminal β€” Tab (pin 4)

Datasheets & Resources

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