BSP92PH6327XTSA1 vs BSP129H6327XTSA1 비교
다음의 상세 나란히 비교: BSP92PH6327XTSA1 제조: Infineon 및 BSP129H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSP92PH6327XTSA1 | BSP129H6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.31 | $0.30 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| 트랜지스터 유형 | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | 240 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| 패키지 | PG-SOT223-4 (SOT-223-4) | PG-SOT223-4 (SOT-223, 3+Tab) |
| 실장 유형 | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| 동작 온도 | -55C to +150C (Tj) | -55 C to +150 C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL 레벨 | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| 핀 수 | 4 (Gate, Drain, Drain, Source) | — |
| FET Type | — | N-Channel, Depletion Mode |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| On-Resistance RDS(on) max | — | 4.2 ohm (some sources 6 ohm) |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage VGS(off) | — | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | — | Yes (rated) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |
| Process Technology | — | SIPMOS (vertical DMOS) |
| Drain Terminal | — | Tab (pin 4) |