BSS169H6327XTSA1 vs 2N7002L Vergleich
Detaillierter Direktvergleich von BSS169H6327XTSA1 von Infineon und 2N7002L von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS169H6327XTSA1 | 2N7002L |
|---|---|---|
| Marke | Infineon | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,03 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 170 mA (Ta) | 115 mA (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) | 200 mW (Ta), 225 mW max |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | 1 V to 2.5 V |
| Betriebstemperaturbereich | [DATA_NEEDED: junction/ambient operating temperature range] | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | SOT-23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | High cell density trench MOSFET |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| Transistortyp | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |