BSS169H6327XTSA1 vs 2N7002L 对比
详细并排对比 BSS169H6327XTSA1 出自 Infineon 和 2N7002L 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS169H6327XTSA1 | 2N7002L |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.15 | $0.03 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 170 mA (Ta) | 115 mA (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) | 200 mW (Ta), 225 mW max |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | 1 V to 2.5 V |
| 工作温度范围 | [DATA_NEEDED: junction/ambient operating temperature range] | — |
| 封装 | PG-SOT23 (SOT-23-3) | SOT-23 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | High cell density trench MOSFET |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| 晶体管类型 | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |