BSS87H6327FTSA1 vs BSP88H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS87H6327FTSA1 von Infineon und BSP88H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS87H6327FTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,21 |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1 W (Ta) | 1.8 W at Ta=25 C |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gehäuse | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (SOT-223-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Pin-Anzahl | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | — |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Process Technology | Vertical DMOS | — |
| Transistortyp | — | N-Channel MOSFET |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Betriebstemperatur | — | -55 C to +150 C |
| Technology | — | SIPMOS (planar enhancement mode) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |