BSS87H6327FTSA1 vs BSP88H6327XTSA1 Comparison
Detailed side-by-side comparison of BSS87H6327FTSA1 by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS87H6327FTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1 W (Ta) | 1.8 W at Ta=25 C |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Package | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (SOT-223-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | — |
| Pin Count | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | — |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Process Technology | Vertical DMOS | — |
| Transistor Type | — | N-Channel MOSFET |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Operating Temperature | — | -55 C to +150 C |
| Technology | — | SIPMOS (planar enhancement mode) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |