BSS87H6327FTSA1 vs BSR802NL6327HTSA1 Vergleich
Detaillierter Direktvergleich von BSS87H6327FTSA1 von Infineon und BSR802NL6327HTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS87H6327FTSA1 | BSR802NL6327HTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,15 |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 260 mA (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| Gehäuse | PG-SOT89-4-2 (SOT-89) | PG-SC59-3 (SC-59 / SOT-346) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Pin-Anzahl | 3 (Gate / Drain / Source) | 3 |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Process Technology | Vertical DMOS | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR802NL6327HTSA1 |
| Technology | — | OptiMOS 2 (N-Channel Trench MOSFET) |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Qualification | — | Automotive |