BSS87H6327FTSA1 vs BSR802NL6327HTSA1 Comparison
Detailed side-by-side comparison of BSS87H6327FTSA1 by Infineon and BSR802NL6327HTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS87H6327FTSA1 | BSR802NL6327HTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 260 mA (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| Package | PG-SOT89-4-2 (SOT-89) | PG-SC59-3 (SC-59 / SOT-346) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | — |
| Pin Count | 3 (Gate / Drain / Source) | 3 |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Process Technology | Vertical DMOS | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR802NL6327HTSA1 |
| Technology | — | OptiMOS 2 (N-Channel Trench MOSFET) |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Operating Junction Temperature | — | -55C to +150C |
| Qualification | — | Automotive |