BSS87H6327FTSA1 vs BSR802NL6327HTSA1 对比

详细并排对比 BSS87H6327FTSA1 出自 Infineon 和 BSR802NL6327HTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 ✓ 量产中
Infineon
BSR802NL6327HTSA1 BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 ✓ 量产中

规格对比

参数 BSS87H6327FTSA1 BSR802NL6327HTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.18 $0.15
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
封装 PG-SOT89-4-2 (SOT-89) PG-SC59-3 (SC-59 / SOT-346)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) —
引脚数量 3 (Gate / Drain / Source) 3
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
Lead-Free / Pb-Free Yes (Pb-free plating) —
MSL 等级 1 (per JEDEC J-STD-020) —
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Part Number — BSR802NL6327HTSA1
Technology — OptiMOS 2 (N-Channel Trench MOSFET)
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
工作结温 — -55C to +150C
Qualification — Automotive

数据手册与资源

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