BSZ068N06NSATMA1 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von BSZ068N06NSATMA1 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ068N06NSATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,82 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | OptiMOS 5 (trench-gate) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | — |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V | 7.6 mOhm |
| Power Dissipation (Ta) | 2.1 W | 2.3 W |
| Power Dissipation (Tc) | 46 W | 65 W |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | — |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 | — |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |