BSZ068N06NSATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of BSZ068N06NSATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ068N06NSATMA1

BSZ068N06NSATMA1 - 60V, 6.8mΞ© N-Channel OptiMOS 5 MOSFET | Infineon

BSZ068N06NSATMA1 βœ“ Active
Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter BSZ068N06NSATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.82
FET Type N-Channel 2x N-Channel MOSFET array
Technology OptiMOS 5 (trench-gate) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID, Tc) 40 A β€”
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID at Ta] β€”
On-Resistance RDS(on) max 6.8 mΞ© @ VGS=10 V 7.6 mOhm
Power Dissipation (Ta) 2.1 W 2.3 W
Power Dissipation (Tc) 46 W 65 W
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] β€”
Total Gate Charge Qg [DATA_NEEDED: Qg typ] β€”
Operating Temperature Range -55 Β°C to +150 Β°C β€”
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) β€”
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 β€”
RoHS / Halogen-Free RoHS compliant, halogen-free β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
Gate Threshold Voltage (VGS(th)) β€” 4 V (max, typical)
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Operating Junction Temperature β€” -55 C to +175 C
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)

Datasheets & Resources

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