BTS5215LAUMA1 vs BTS621L1E3128ABUMA1 Vergleich
Detaillierter Direktvergleich von BTS5215LAUMA1 von Infineon und BTS621L1E3128ABUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BTS5215LAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $2,45 |
| Product Type | Smart High-Side Power Switch | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| On-State Resistance (RDS(on)) | 90 mΩ typical per channel | — |
| Continuous Output Current per Channel | 3.7 A | — |
| Operating Voltage Range | 8 V to 36 V | — |
| Standby Current | Very low (datasheet value [DATA_NEEDED: standby current uA]) | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Status feedback per channel | Yes - open-load and overtemperature reporting |
| MOSFET Technology | N-channel vertical power MOSFET with charge pump | — |
| Load Type Support | Resistive and inductive loads | — |
| Protection Features | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage | — |
| Demagnetization | Fast demagnetization of inductive loads | — |
| Gehäuse | PG-DSO-12-9 | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Betriebstemperatur | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] | — |
| RoHS-Status | Compliant | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Betriebstemperaturbereich | — | -40 °C to +150 °C junction |
| Montageart | — | Surface Mount |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |