BTS5215LAUMA1 vs BTS621L1E3128ABUMA1 Comparación
Comparación detallada lado a lado de BTS5215LAUMA1 por Infineon y BTS621L1E3128ABUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BTS5215LAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $2,45 |
| Product Type | Smart High-Side Power Switch | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| On-State Resistance (RDS(on)) | 90 mΩ typical per channel | — |
| Continuous Output Current per Channel | 3.7 A | — |
| Operating Voltage Range | 8 V to 36 V | — |
| Standby Current | Very low (datasheet value [DATA_NEEDED: standby current uA]) | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Status feedback per channel | Yes - open-load and overtemperature reporting |
| MOSFET Technology | N-channel vertical power MOSFET with charge pump | — |
| Load Type Support | Resistive and inductive loads | — |
| Protection Features | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage | — |
| Demagnetization | Fast demagnetization of inductive loads | — |
| Encapsulado | PG-DSO-12-9 | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Temperatura de funcionamiento | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] | — |
| Estado RoHS | Compliant | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Rango de temperatura de funcionamiento | — | -40 °C to +150 °C junction |
| Tipo de montaje | — | Surface Mount |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |