BTS5215LAUMA1 vs BTS621L1E3128ABUMA1 비교

다음의 상세 나란히 비교: BTS5215LAUMA1 제조: Infineon 및 BTS621L1E3128ABUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS5215LAUMA1 BTS621L1E3128ABUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $2.45
Product Type Smart High-Side Power Switch Dual-channel smart high-side power switch (PROFET)
Number of Channels 2 2 (dual high-side, 1:1)
On-State Resistance (RDS(on)) 90 mΩ typical per channel —
Continuous Output Current per Channel 3.7 A —
Operating Voltage Range 8 V to 36 V —
Standby Current Very low (datasheet value [DATA_NEEDED: standby current uA]) —
Input Logic Compatibility CMOS-compatible, ground-referenced CMOS-compatible, ground-referenced
Diagnostic Feedback Status feedback per channel Yes - open-load and overtemperature reporting
MOSFET Technology N-channel vertical power MOSFET with charge pump —
Load Type Support Resistive and inductive loads —
Protection Features Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage —
Demagnetization Fast demagnetization of inductive loads —
패키지 PG-DSO-12-9 PG-TO263-7-2 (D2PAK-7, exposed tab)
동작 온도 -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] —
RoHS 상태 Compliant —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
동작 온도 범위 — -40 °C to +150 °C junction
실장 유형 — Surface Mount
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

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