BTS5215LAUMA1 vs BTS621L1E3128ABUMA1 比較

詳細な並列比較: BTS5215LAUMA1 メーカー: Infineon および BTS621L1E3128ABUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ BTS5215LAUMA1 BTS621L1E3128ABUMA1
ブランド Infineon Infineon
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $1.18 $2.45
Product Type Smart High-Side Power Switch Dual-channel smart high-side power switch (PROFET)
Number of Channels 2 2 (dual high-side, 1:1)
On-State Resistance (RDS(on)) 90 mΩ typical per channel —
Continuous Output Current per Channel 3.7 A —
Operating Voltage Range 8 V to 36 V —
Standby Current Very low (datasheet value [DATA_NEEDED: standby current uA]) —
Input Logic Compatibility CMOS-compatible, ground-referenced CMOS-compatible, ground-referenced
Diagnostic Feedback Status feedback per channel Yes - open-load and overtemperature reporting
MOSFET Technology N-channel vertical power MOSFET with charge pump —
Load Type Support Resistive and inductive loads —
Protection Features Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage —
Demagnetization Fast demagnetization of inductive loads —
パッケージ PG-DSO-12-9 PG-TO263-7-2 (D2PAK-7, exposed tab)
動作温度 -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] —
RoHS ステータス Compliant —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
動作温度範囲 — -40 °C to +150 °C junction
実装タイプ — Surface Mount
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

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