BTS5215LAUMA1 vs BTS621L1E3128ABUMA1 Сравнение
Подробное сравнение бок о бок BTS5215LAUMA1 от Infineon и BTS621L1E3128ABUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ АктивенСравнение характеристик
| Параметр | BTS5215LAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $2,45 |
| Product Type | Smart High-Side Power Switch | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| On-State Resistance (RDS(on)) | 90 mΩ typical per channel | — |
| Continuous Output Current per Channel | 3.7 A | — |
| Operating Voltage Range | 8 V to 36 V | — |
| Standby Current | Very low (datasheet value [DATA_NEEDED: standby current uA]) | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Status feedback per channel | Yes - open-load and overtemperature reporting |
| MOSFET Technology | N-channel vertical power MOSFET with charge pump | — |
| Load Type Support | Resistive and inductive loads | — |
| Protection Features | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage | — |
| Demagnetization | Fast demagnetization of inductive loads | — |
| Корпус | PG-DSO-12-9 | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Рабочая температура | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] | — |
| Статус RoHS | Compliant | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Диапазон рабочих температур | — | -40 °C to +150 °C junction |
| Тип монтажа | — | Surface Mount |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |