DG411 vs DG413 Vergleich

Detaillierter Direktvergleich von DG411 von Analog Devices und DG413 von Analog Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter DG411 DG413
Marke Analog Devices Analog Devices
Kategorie Logic ICs Logic ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,34 $3,34
Switch Configuration 4 x SPST (normally open) Quad SPST (2 NC + 2 NO)
On-Resistance (Max) 35 ohm —
On-Resistance Matching (Max) 3 ohm —
On-Resistance Flatness (Max) 4 ohm —
Supply Voltage Range Single-ended up to 44V, or split +/-20V —
Signal Handling 40VP-P signals —
Logic Input Compatibility TTL and CMOS —
Signal Direction Bilateral (conducts equally in either direction) —
Number of Circuits 4 —
Gehäuse 16-SOIC SOIC-16 (DY suffix)
Montageart Surface Mount Surface Mount
Technology High-voltage silicon-gate CMOS with epitaxial layer (latch-up immune) High-voltage silicon-gate CMOS, epi layer latch-up immune
Drop-in Replacement For DG211 / DG212 series —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Versorgungsstrom [DATA_NEEDED: analog supply current] —
Switching Time [DATA_NEEDED: ton/toff switching time] —
RoHS-Status [DATA_NEEDED: RoHS compliance status] Compliant
On-Resistance (rDS on) — 35 ohm max
Turn-On Time (tON) — 150 ns max
Turn-Off Time (tOFF) — 100 ns max
Maximum Supply Voltage — 44 V
Single Supply Range — +10 V to +30 V
Dual Supply Range — ±4.5 V to ±20 V
Analog Signal Range — 15 V (within rails), up to 40 Vp-p with 44 V process
Digital Input Compatibility — TTL and CMOS
Power Dissipation — 0.35 mW (ultra low, typ per family data)
Charge Injection — Reduced vs DG211/DG212 (value [DATA_NEEDED: charge injection value])
Number of Channels — 4

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