DG411 vs DG413 Comparação
Comparação detalhada lado a lado de DG411 por Analog Devices e DG413 por Analog Devices. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | DG411 | DG413 |
|---|---|---|
| Marca | Analog Devices | Analog Devices |
| Categoria | Logic ICs | Logic ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3,34 | $3,34 |
| Switch Configuration | 4 x SPST (normally open) | Quad SPST (2 NC + 2 NO) |
| On-Resistance (Max) | 35 ohm | — |
| On-Resistance Matching (Max) | 3 ohm | — |
| On-Resistance Flatness (Max) | 4 ohm | — |
| Supply Voltage Range | Single-ended up to 44V, or split +/-20V | — |
| Signal Handling | 40VP-P signals | — |
| Logic Input Compatibility | TTL and CMOS | — |
| Signal Direction | Bilateral (conducts equally in either direction) | — |
| Number of Circuits | 4 | — |
| Encapsulamento | 16-SOIC | SOIC-16 (DY suffix) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | High-voltage silicon-gate CMOS with epitaxial layer (latch-up immune) | High-voltage silicon-gate CMOS, epi layer latch-up immune |
| Drop-in Replacement For | DG211 / DG212 series | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Corrente de alimentação | [DATA_NEEDED: analog supply current] | — |
| Switching Time | [DATA_NEEDED: ton/toff switching time] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| On-Resistance (rDS on) | — | 35 ohm max |
| Turn-On Time (tON) | — | 150 ns max |
| Turn-Off Time (tOFF) | — | 100 ns max |
| Maximum Supply Voltage | — | 44 V |
| Single Supply Range | — | +10 V to +30 V |
| Dual Supply Range | — | ±4.5 V to ±20 V |
| Analog Signal Range | — | 15 V (within rails), up to 40 Vp-p with 44 V process |
| Digital Input Compatibility | — | TTL and CMOS |
| Power Dissipation | — | 0.35 mW (ultra low, typ per family data) |
| Charge Injection | — | Reduced vs DG211/DG212 (value [DATA_NEEDED: charge injection value]) |
| Number of Channels | — | 4 |