FDS6575 vs IRF7105TRPBF Vergleich

Detaillierter Direktvergleich von FDS6575 von onsemi und IRF7105TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter FDS6575 IRF7105TRPBF
Marke onsemi Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,28 $0,30
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) -10 A —
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V —
Gate Drive Voltage Range 2.5 V to 8 V —
Gate-Schwellenspannung [DATA_NEEDED: gate threshold voltage range] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Technology PowerTrench (rugged gate) HEXFET (IR MOSFET, fifth generation)
Gehäuse SOIC-8 (SO-8) 8-SO (SOIC-8)
Montageart Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] [DATA_NEEDED: junction temperature range]
Configuration Single MOSFET —
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] —
RoHS-Status Compliant —
Manufacturer — Infineon Technologies
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Total Package Power Dissipation (Pd) — 2 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant
Pin-Anzahl — 8

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