FDS6575 vs IRF7105TRPBF Comparison

Detailed side-by-side comparison of FDS6575 by onsemi and IRF7105TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FDS6575 IRF7105TRPBF
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.28 $0.30
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -20 V β€”
Continuous Drain Current (ID) -10 A β€”
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V β€”
Gate Drive Voltage Range 2.5 V to 8 V β€”
Gate Threshold Voltage [DATA_NEEDED: gate threshold voltage range] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Technology PowerTrench (rugged gate) HEXFET (IR MOSFET, fifth generation)
Package SOIC-8 (SO-8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] [DATA_NEEDED: junction temperature range]
Configuration Single MOSFET β€”
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] β€”
RoHS Status Compliant β€”
Manufacturer β€” Infineon Technologies
Part Series β€” IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration β€” N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) β€” 25 V
Continuous Drain Current - N-channel (Id, N-ch) β€” 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) β€” 2.3 A
Rds(on) Maximum β€” 100 mOhm
Total Package Power Dissipation (Pd) β€” 2 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: typical Vgs(th)]
Packaging Form β€” Tape & Reel (TR)
Lead-Free / RoHS Status β€” Pb-free (PBF suffix), RoHS compliant
Pin Count β€” 8

Datasheets & Resources

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