FDS6575 vs IRF7105TRPBF 비교
다음의 상세 나란히 비교: FDS6575 제조: onsemi 및 IRF7105TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | FDS6575 | IRF7105TRPBF |
|---|---|---|
| 브랜드 | onsemi | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.28 | $0.30 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | — |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| 게이트 임계 전압 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | PowerTrench (rugged gate) | HEXFET (IR MOSFET, fifth generation) |
| 패키지 | SOIC-8 (SO-8) | 8-SO (SOIC-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: junction temperature range] |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS 상태 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IRF7105 (HEXFET Fifth Generation) |
| Polarity / Configuration | — | N-Channel + P-Channel, dual MOSFET in one package |
| Drain-to-Source Voltage (Vds) | — | 25 V |
| Continuous Drain Current - N-channel (Id, N-ch) | — | 3.5 A |
| Continuous Drain Current - P-channel (Id, P-ch) | — | 2.3 A |
| Rds(on) Maximum | — | 100 mOhm |
| Total Package Power Dissipation (Pd) | — | 2 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Packaging Form | — | Tape & Reel (TR) |
| Lead-Free / RoHS Status | — | Pb-free (PBF suffix), RoHS compliant |
| 핀 수 | — | 8 |