FDS6575 vs IRF7105TRPBF 对比
详细并排对比 FDS6575 出自 onsemi 和 IRF7105TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | FDS6575 | IRF7105TRPBF |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.28 | $0.30 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | — |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| 栅极阈值电压 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | PowerTrench (rugged gate) | HEXFET (IR MOSFET, fifth generation) |
| 封装 | SOIC-8 (SO-8) | 8-SO (SOIC-8) |
| 安装类型 | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: junction temperature range] |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IRF7105 (HEXFET Fifth Generation) |
| Polarity / Configuration | — | N-Channel + P-Channel, dual MOSFET in one package |
| Drain-to-Source Voltage (Vds) | — | 25 V |
| Continuous Drain Current - N-channel (Id, N-ch) | — | 3.5 A |
| Continuous Drain Current - P-channel (Id, P-ch) | — | 2.3 A |
| Rds(on) Maximum | — | 100 mOhm |
| Total Package Power Dissipation (Pd) | — | 2 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Packaging Form | — | Tape & Reel (TR) |
| Lead-Free / RoHS Status | — | Pb-free (PBF suffix), RoHS compliant |
| 引脚数量 | — | 8 |