FDS6575 vs IRF7306TRPBF Vergleich

Detaillierter Direktvergleich von FDS6575 von onsemi und IRF7306TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter FDS6575 IRF7306TRPBF
Marke onsemi Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,28 $0,55
Polarity P-Channel P-Channel (dual)
Drain-Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) -10 A -3.6 A at 25°C
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V —
Gate Drive Voltage Range 2.5 V to 8 V —
Gate-Schwellenspannung [DATA_NEEDED: gate threshold voltage range] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Technology PowerTrench (rugged gate) HEXFET Power MOSFET (Generation V)
Gehäuse SOIC-8 (SO-8) 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Montageart Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] -55°C to +150°C (junction)
Configuration Single MOSFET —
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] —
RoHS-Status Compliant —
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Packaging — Tape & Reel (TR)
MSL-Level — 1 (per JEDEC J-STD-020)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern