FDS6575 vs IRF7306TRPBF 对比
详细并排对比 FDS6575 出自 onsemi 和 IRF7306TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | FDS6575 | IRF7306TRPBF |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.28 | $0.55 |
| Polarity | P-Channel | P-Channel (dual) |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | -3.6 A at 25°C |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| 栅极阈值电压 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | PowerTrench (rugged gate) | HEXFET Power MOSFET (Generation V) |
| 封装 | SOIC-8 (SO-8) | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| 安装类型 | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55°C to +150°C (junction) |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS 状态 | Compliant | — |
| Number of Channels | — | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| On-Resistance RDS(on) max | — | 100 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation | — | 2 W at TA = 25°C |
| Packaging | — | Tape & Reel (TR) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Yes (PBF suffix indicates Pb-free) |
| Qualification | — | Consumer market qualification standards (per IR/Infineon datasheet) |
| Avalanche Rated | — | Yes (ruggedized device per datasheet) |