FDS6575 vs IRF7306TRPBF Comparison

Detailed side-by-side comparison of FDS6575 by onsemi and IRF7306TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FDS6575 IRF7306TRPBF
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.28 $0.55
Polarity P-Channel P-Channel (dual)
Drain-Source Voltage (VDS) -20 V β€”
Continuous Drain Current (ID) -10 A -3.6 A at 25Β°C
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V β€”
Gate Drive Voltage Range 2.5 V to 8 V β€”
Gate Threshold Voltage [DATA_NEEDED: gate threshold voltage range] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Technology PowerTrench (rugged gate) HEXFET Power MOSFET (Generation V)
Package SOIC-8 (SO-8) 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Mounting Type Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55Β°C to +150Β°C (junction)
Configuration Single MOSFET β€”
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] β€”
RoHS Status Compliant β€”
Number of Channels β€” 2 (independent, in single package)
Drain-to-Source Voltage (VDS) β€” -30 V
On-Resistance RDS(on) max β€” 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg total]
Maximum Power Dissipation β€” 2 W at TA = 25Β°C
Packaging β€” Tape & Reel (TR)
MSL Level β€” 1 (per JEDEC J-STD-020)
RoHS Compliance β€” Yes (PBF suffix indicates Pb-free)
Qualification β€” Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated β€” Yes (ruggedized device per datasheet)

Datasheets & Resources

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