FDS6575 vs IRF7306TRPBF 비교
다음의 상세 나란히 비교: FDS6575 제조: onsemi 및 IRF7306TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | FDS6575 | IRF7306TRPBF |
|---|---|---|
| 브랜드 | onsemi | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.28 | $0.55 |
| Polarity | P-Channel | P-Channel (dual) |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | -3.6 A at 25°C |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| 게이트 임계 전압 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | PowerTrench (rugged gate) | HEXFET Power MOSFET (Generation V) |
| 패키지 | SOIC-8 (SO-8) | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| 실장 유형 | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | -55°C to +150°C (junction) |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS 상태 | Compliant | — |
| Number of Channels | — | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| On-Resistance RDS(on) max | — | 100 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation | — | 2 W at TA = 25°C |
| Packaging | — | Tape & Reel (TR) |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Yes (PBF suffix indicates Pb-free) |
| Qualification | — | Consumer market qualification standards (per IR/Infineon datasheet) |
| Avalanche Rated | — | Yes (ruggedized device per datasheet) |